IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
Reading and writing operations of memory device in micro-electromechanical resonator
Atsushi YaoTakashi Hikihara
著者情報
ジャーナル フリー

2012 年 9 巻 14 号 p. 1230-1236

詳細
抄録
Micro-electromechanical resonators substantially exhibit bistable and hysteretic response when nonlinear characteristics appear. Badzey et al. reported that the nonlinear micro-electromechanical resonators can be used as a mechanical 1bit memory. Based on their results, the authors propose reading and writing operations of the memory device. The reading and writing operations imply a displacement measurement and a switching of two stable periodic vibrations, respectively. In this paper, we realize a displacement measurement along an approach avoiding supplemented sensors. In addition, we achieve the switching operation between two coexisting periodic states by a displacement feedback control.
著者関連情報
© 2012 by The Institute of Electronics, Information and Communication Engineers
前の記事
feedback
Top