2012 Volume 9 Issue 16 Pages 1329-1334
We investigated nitrogen-rich HfN insulator on p-Si(100) substrate to prevent to form an interface layer with low dielectric constant by electron-cyclotron-resonance plasma sputtering method for the first time. The nitrogen concentration in the deposited HfN film was confirmed as approximately Hf:N = 1:1.2. Furthermore, the electrical properties of Al/HfN/p-Si(100) gate stack were improved by hydrogen anneal compared to nitrogen (N2) anneal. The EOT of 0.64nm with low leakage current of 6.2×10-4 A/cm2 (@ VFB -1V) was obtained. The results suggest that the effect of hydrogen anneal attributed to improve the electrical properties of HfN gate dielectric.