Variation-tolerant Cu_xSi_yO-based RRAM for low power application

Abstract

An embedded Non-Volatile Resistive Memory IP with low power and high reliability is presented for application in RFID tags. The logic-based Cu_xSi_yO resistive RAM employs a 2-transistor-2-resistor (2T2R) cell structure to reduce process variation and expand sensing margin. The feedback mechanism is adopted in the write process to prevent power consumption. A 64Kb RRAM IP is embedded in RFID tag test chip in 0.13µm logic process. Test results indicate that 6X margin is attained in resistance distribution at worst case and 22.2µW program power is achieved, which demonstrates the low power and variation-tolerant robustness.