IEICE Electronics Express
Online ISSN : 1349-2543
Theoretical analysis of the damping effect on a transistor laser
Mizuki ShiraoNobuhiko NishiyamaNoriaki SatoShigehisa Arai
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JOURNALS FREE ACCESS

2012 Volume 9 Issue 23 Pages 1792-1798

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Abstract

The impact of carrier pulling on the modulation characteristics of a transistor laser is discussed. The results of a theoretical analysis of modulation bandwidth and damping effect show that the carrier transport effect obtained by using a transistor laser allows for a gain compression factor of about one-tenth that of a conventional laser (0.7×1017cm3), as well as for a maximum modulation bandwidth of 45GHz.

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© 2012 by The Institute of Electronics, Information and Communication Engineers
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