2012 年 9 巻 8 号 p. 752-757
Photo-electrochemical etched Si layers were prepared on n-type (110) oriented silicon wafer. SEM results shows groove structure for etched Si (110). The photoluminescence (PL), Fourier transformed infrared (FTIR) absorption and Raman spectroscopy of etched Si (110) as a function of etching time was studied. All samples showed a PL peak in the visible spectral and the intensity of the PL peak increases with rising of the etching time. It is also found that the Raman peak of the etched Si samples is red shifted and its intensity significantly decreases as the etching time increases.
