Simulation study on scaling limit of silicon tunneling field-effect transistor under tunneling-predominance

Abstract

In this work, a strategic methodology to determine the channel length limit for the predominance of tunneling mechanism in the operation of a tunneling field-effect transistor (TFET) is suggested and validated for silicon (Si) nanowire TFET device. For quantitative analyses that can be graphitized as a function of channel length, a set of evaluating functions were defined and properly applied. Based on the suggested methodology, the upper limit for keeping the Si TFET under the tunneling-predominant operation turned out to be approximately 65nm in a nanowire structure.