Analytical Models for the Thermal Strain and Stress Induced by Annular Through-Silicon-Via (TSV)

Fengjuan Wang; Zhangming Zhu; Yintang Yang; Xiaoxian Liu; Ruixue Ding

doi:10.1587/elex.10.20130666

This article has now been updated. Please use the final version.

Analytical Models for the Thermal Strain and Stress Induced by Annular Through-Silicon-Via (TSV)

Fengjuan Wang, Zhangming Zhu, Yintang Yang, Xiaoxian Liu, Ruixue Ding

Author information

Keywords: Annular through-silicon-via (TSV), Thermal strain, Thermal Stress, Finite element method (FEM), Keep-out-zone (KOZ)

JOURNAL FREE ACCESS Advance online publication

Article ID: 10.20130666

DOI https://doi.org/10.1587/elex.10.20130666

The final version of this article is now available: Vol. 10 (2013), No. 20 pp. 20130666-20130666

Details

Abstract

Accurate analytical models for the strain and stress in silicon induced by annular Through-silicon-via (TSV) are proposed. Finite element method (FEM) is used for the model verification. It is shown that errors for the strain and stress models are respectively less than 6.6% and 6.8% for various metal and dielectric materials. Based on the analytical model of stress, keep-out-zones (KOZs) are also evaluated for pMOS and nMOS, as the stress is parallel and perpendicular to transistor channel. Annular TSVs with various materials induce KOZs of less than 6.6μm. W exhibits the best thermo-mechanical performance with KOZ=0.

Corresponding author

Register with J-STAGE for free!