Study of Charge Retention Mechanism for DNA Memory FET

Shoko Maeno; Naoto Matsuo; Shohei Nakamura; Akira Heya; Tadao Takada; Kazushige Yamana; Masataka Fukuyama; Shin Yokoyama

doi:10.1587/elex.11.20130900

This article has now been updated. Please use the final version.

Study of Charge Retention Mechanism for DNA Memory FET

Shoko Maeno, Naoto Matsuo, Shohei Nakamura, Akira Heya, Tadao Takada, Kazushige Yamana, Masataka Fukuyama, Shin Yokoyama

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Keywords: DNA, Memory, Transistor, Charge retention, Trap, Detrap

JOURNAL FREE ACCESS Advance online publication

Article ID: 11.20130900

DOI https://doi.org/10.1587/elex.11.20130900

The final version of this article is now available: Vol. 11 (2014), No. 5 pp. 20130900-20130900

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Abstract

We report charge retention mechanism through 400bp (136nm) of λ-DNA molecules. The DNA solution was dropped on two Si electrodes with the gap of 120nm. We measured change the refresh characteristics by applying the negative voltage to the gate. As a result, we found that the electron trap remarkably influenced on the hole conduction of the DNA channel. In addition, the DNA has memory ability because trap and detrap state can be controlled by refresh voltage.

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