抄録
A novel area-efficient dual replica-bitline delay technique is proposed in this brief to improve process-variation-tolerance of low voltage SRAM application. This strategy suppresses the timing variation by adding one another replica-bitline and introducing novel replica cell which has the same size as conventional. Simulation results in TSMC 65nm LP technology show that more than 32.3% timing variation is reduced and 18% cycle time is saved at low supply voltage without any area overhead.
