Spectral Characteristics of a 1.3-µm npn-AlGaInAs/InP Transistor Laser under Various Operating Conditions

Masashi Yukinari; Noriaki Sato; Nobuhiko Nishiyama; Shigehisa Arai

doi:10.1587/elex.11.20140679

This article has now been updated. Please use the final version.

Spectral Characteristics of a 1.3-µm npn-AlGaInAs/InP Transistor Laser under Various Operating Conditions

Masashi Yukinari, Noriaki Sato, Nobuhiko Nishiyama, Shigehisa Arai

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Keywords: semiconductor laser, transistor laser, AlGaInAs/InP

JOURNAL FREE ACCESS Advance online publication

Article ID: 11.20140679

DOI https://doi.org/10.1587/elex.11.20140679

The final version of this article is now available: Vol. 11 (2014), No. 18 pp. 20140679-20140679

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Abstract

The spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser were studied under various collector–base voltages and emitter currents. The result shows that the peak wavelength shifts as a function of the output power resulting from voltage and current controls exhibited contrasting behavior under a continuous-wave operation.

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