Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
Noriaki Sato
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
Nobuhiko Nishiyama
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
Shigehisa Arai
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
The spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser were studied under various collector–base voltages and emitter currents. The result shows that the peak wavelength shifts as a function of the output power resulting from voltage and current controls exhibited contrasting behavior under a continuous-wave operation.
