This letter investigates the effects of coaxial through-silicon via (TSV) on carrier motilities in the channels of nMOS and pMOS with channels along [100] and [110] orientations on (100) silicon. The keep-out zone (KOZ) induced by coaxial TSV and the effective area occupied by TSV and surrounding KOZ are evaluated. The results show that, the effective area is reduced by ~92% by aligning the channels of pMOS along [100] orientation and nMOS along [110] orientation than the opposite orientations. The absolute error ranges from -12.5μm to 7.2μm as the anisotropic property of silicon are neglected.
