IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
Effects of coaxial through-silicon via on carrier mobility along [100] and [110] crystal directions of (100) silicon
Fengjuan WangNingmei YuZhangming ZhuXiangkun YinYintang Yang
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JOURNAL FREE ACCESS

2015 Volume 12 Issue 14 Pages 20150434

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Abstract

This letter investigates the effects of coaxial through-silicon via (TSV) on carrier motilities in the channels of nMOS and pMOS with channels along [100] and [110] orientations on (100) silicon. The keep-out zone (KOZ) induced by coaxial TSV and the effective area occupied by TSV and surrounding KOZ are evaluated. The results show that, the effective area is reduced by ∼92% by aligning the channels of pMOS along [100] orientation and nMOS along [110] orientation than the opposite orientations. The absolute error ranges from −12.5 µm to 7.2 µm as the anisotropic property of silicon are neglected.

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© 2015 by The Institute of Electronics, Information and Communication Engineers
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