Additive-Calibration Scheme for Leakage Compensation of Low Voltage SRAM

抄録

As the bit-line leakage increases, the performance of SRAM will decline. Especially, the read operation will even fail when the amount of the leakage reaches a critical value. In this paper, we present a new technique, called Additive Calibration (AC), which can combat the bit-line leakage problem even in low voltage. Simulation results show that the maximum tolerant bit-line leakage current of our AC scheme is increased by 45.6% compared with the previous X-calibration scheme. Thus, this method can perform at higher frequency with much lower power consumption.