IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543

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Modulation transfer function analysis of silicon X-ray sensor with trench-structured photodiodes
Tetsuya AriyoshiJumpei IwasaYuta TakaneKenji SakamotoAkiyoshi BabaYutaka Arima
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論文ID: 15.20180177

この記事には本公開記事があります。
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A silicon X-ray sensor with trench-structured photodiodes was studied and the influence of Compton scattering was estimated. By irradiating the target pixel with X-rays and measuring the signal from adjacent pixels, X-ray scattering and pixel blur of the proposed sensor was determined. An X-ray sensor with a length of 22.6 mm was designed and fabricated, and its modulation transfer function (MTF) was obtained. A sensor structure to improve the MTF level to that of CdTe was proposed.

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© 2018 by The Institute of Electronics, Information and Communication Engineers
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