Modulation transfer function analysis of silicon X-ray sensor with trench-structured photodiodes

Tetsuya Ariyoshi; Jumpei Iwasa; Yuta Takane; Kenji Sakamoto; Akiyoshi Baba; Yutaka Arima

doi:10.1587/elex.15.20180177

LETTER

Modulation transfer function analysis of silicon X-ray sensor with trench-structured photodiodes

Tetsuya Ariyoshi, Jumpei Iwasa, Yuta Takane, Kenji Sakamoto, Akiyoshi Baba, Yutaka Arima

著者情報

キーワード: X-ray sensor, silicon sensor, silicon wafer, trench photodiode, Compton scattering, modulation transfer function (MTF)

ジャーナルフリー

2018 年 15 巻 11 号 p. 20180177

DOI https://doi.org/10.1587/elex.15.20180177

Browse “Advance online publication” version

詳細

抄録

A silicon X-ray sensor with trench-structured photodiodes was studied and the influence of Compton scattering was estimated. By irradiating the target pixel with X-rays and measuring the signal from adjacent pixels, X-ray scattering and pixel blur of the proposed sensor was determined. An X-ray sensor with a length of 22.6 mm was designed and fabricated, and its modulation transfer function (MTF) was obtained. A sensor structure to improve the MTF level to that of CdTe was proposed.

責任著者(Corresponding author)

J-STAGEへの登録はこちら（無料）