論文ID: 15.20180775
This letter describes the design and realization of the low-cost power amplifier module with operation frequency at 7.9-8.4GHz. Realized power amplifier module employing fully internally matched GaN HEMT power amplifier exhibits 10W output power and associated gain of 50.1dB at X-band frequency for satellite communications. The module exhibits the 20% of power added efficiency (PAE), whereas the main power amplifier with internally matched HEMT device achieves 29.3% of PAE. 3rd order intermodulation level is less than -35dBc with 7dB output power back-off condition. Proposed housing method of the power amplifier module reduces the thermal distribution by more than 30°C.
