A short circuit protection circuit for SiC MOSFET with self-adjustive blanking time

Tiantian Liu; Yuhua Quan; Xuetong Zhou; Yufei Tian; Xinhong Cheng; Xiaoyi Huang

doi:10.1587/elex.18.20210345

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引用する場合も本公開記事を引用してください。

A short circuit protection circuit for SiC MOSFET with self-adjustive blanking time

Tiantian Liu, Yuhua Quan, Xuetong Zhou, Yufei Tian, Xinhong Cheng, Xiaoyi Huang

著者情報

Tiantian Liu
The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
Yuhua Quan
The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
Xuetong Zhou
The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
Yufei Tian
The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
Xinhong Cheng
The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
Xiaoyi Huang
The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences

キーワード: SiC MOSFET, short-circuit protection, blanking time

ジャーナルフリー早期公開

論文ID: 18.20210345

DOI https://doi.org/10.1587/elex.18.20210345

この記事には本公開記事があります。

The final version of this article is now available: Vol. 18 (2021), No. 21 pp. 20210345-20210345

詳細

抄録

This paper proposed a desaturation (DESAT) short circuit (SC) protection circuit for SiC MOSFET, where a blanking time setting module and an SC detection module are designed. The fall time of the drain-source voltage (V_DS) for each switching period of SiC MOSFET is recorded and set as the blanking time for the hard switching fault (HSF) detection in the next switching period. Consequently, the detection delay for HSF is self-adjustive and can respond quickly to the operating state of SiC MOSFET. FPGA and discrete components are used to implement the proposed circuit. The function of the proposed circuit is verified using the double pulse test. The experiment results show that the blanking time automatically increases with the increase of load current. The default detection delay of the proposed protection circuit is set 240ns for HSF and can be adjusted during the subsequent switching period. So in the test under a 400V bus voltage, the detection delay is 240ns for HSF at the first switching period. And for HSF occurs at the second switching period, the detection delay is 200ns adjusted according to the operating state of the first switching period. Meanwhile, the detection delay for fault under load (FUL) is 72 ns.

責任著者(Corresponding author)

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