Transient Thermal Characterization of β-Ga₂O₃ Schottky Barrier Diodes

抄録

This paper studies transient thermal characteristics of β-Ga₂O₃ Schottky barrier diode(SBD) packaged in TO-220. Planar and metal-oxide-semiconductor(MOS) trench anode types are evaluated. Junction temperature is estimated from temperature dependency of forward conduction characteristics in measuring SBD transient thermal characteristics. This paper confirms the completeness of processed Schottky junction on β-Ga₂O₃ with extracted diode ideal factor and Schottky barrier height of SBDs. The measured transient thermal characteristics of developed β-Ga₂O₃ SBDs are proved to have higher thermal resistance compared to commercially available SiC SBD and left much to be improved.