Investigation of heat dissipation structure embedded in substrate of power chip based on grid-type thermal through silicon vias

抄録

In the research on heat dissipation technology of power chips, the back thinning method is adopted. However, the back thinning technology is facing the risk of causing damage to the chips because the mechanical support capacity of the chip is significantly reduced. To improve the heat dissipation capacity of the back side of the power chips while not affecting the mechanical support, the back side grid type thermal TSV (GT-TTSV) heat dissipation structure is proposed. Based on the proposed heat transfer structure, the heat dissipation structure is optimized and verified, and compared with the heat dissipation structure of back thinning technology. Simulation comparative study shows that the proposed structure has better heat dissipation ability and thermal reliability.