IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543

This article has now been updated. Please use the final version.

Design of Digital Tunneling-Magnetoresistance Sensors with 260pT/√Hz (@1Hz) Noise Density
Shanshan WangXinpeng DiPengjun WangZexin JiXiaowei Zhang
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JOURNAL FREE ACCESS Advance online publication

Article ID: 22.20250048

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Abstract

Micro-magnetometers with low-noise digital output are extensively utilized in both military and civilian applications. In this work, we propose a method that combines chopping modulation technology with interface ASIC design to effectively attenuate low-frequency 1/f noise. Magnetic shielding and chopping modulation are applied to tunneling magnetoresistance (TMR) sensors. The high-precision interface ASIC incorporates a ripple reduction circuit and utilizes a switched-capacitor sigma-delta topology. The ASIC chip for the TMR magnetometer was fabricated using a 0.35μm CMOS process provided by Shanghai Huahong company. The active area of the interface ASIC is 3.2mm × 3mm. For testing, the interface chip, which includes a three-channel sigma-delta ADC, was integrated with the TMR sensor on the same PCB. The TMR sensor and ASIC operate with a total power consumption of 27mW under a single 5V power supply. The integrated TMR sensor system achieves a resolution of 260pT/√Hz across the signal bandwidth, with a nonlinearity of 0.11% and an input range of ±100μT.

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