A 600V Full Integrated Gate Driver IC with Low-power Four-pulse Level Shifter

Abstract

This paper presents a 600V full integrated gate driver integrated circuit (IC) with a level shifter which is designed for the insulated gate bipolar transistor (IGBT). The chip integrates a low-power four-pulse level shifter, comprising a dynamic current generator with a logic mismatch detection circuit, a latch cell, and an advanced inverter. In the case of a logic level mismatch, the dynamic current generator generates a pulse current, thereby preventing the competition current that results from the simultaneous conduction of the pull-up and pull-down devices. The circuit enhances switching speed and significantly reduces dynamic power consumption. The level shifter employs fewer components, occupies a reduced silicon area, and features low-power consumption, rendering it highly suitable for low-power applications. The proposed low-power four-pulse level shifter has been successfully realized using 3 µm BCD technology. Experimental results indicate that under the conditions of a low input supply voltage of 3 V and a working voltage of 15 V, the delay is 6.574 ns for a 1 MHz input signal while maintaining low-power consumption.