抄録
Tin oxide (SnO2) thin films were deposited on silicon (100) and alumina substrates by using a pulsed laser deposition (PLD) method. X-ray diffraction pattern shows that crystallinity of the film increased with increasing oxygen gas pressure and substrate temperature. Gas sensitivity of the film for 0.31vol% H2 gas increased with increasing oxygen gas pressure and substrate temperature. In addition, Pd doped SnO2 thin films can be prepared using new PLD method combined with d.c. sputtering to prepare highly sensitive gas sensors.
