抄録
In recent years, RF power amplifiers in MOS process are designed. In this paper, we discuss design considerations for MOS RF linear power amplifier. At first, we analyze class-A and AB amplifiers based on square-low characteristics and derive their distortion and drain efficiency, which include different results from literatures. We then consider a class-A 5GHz PA design with push-pull and Series-Combining Transformer configuration in 90nm process. Simulation results show that linear output up to 20.1[dBm] and P1dB of 21[dBm] are obtained.
