抄録
This paper reports on the achievement of high-power 4H-SiC Zener diodes which have a high-doped pn junction with a large active area of 4 mm×4 mm. The temperature coefficient of the breakdown voltage is as small as 5.7×10-5 1/K (positive) in the temperature range 20-300°C. The Zener voltage of the fabricated Zener diodes decreased from 41 to 17 V with an increase in the doping concentration. In addition, power capabilities during rectangular pulsed power (tw = 1 ms) are 6.3 kW (40 kW/cm2) at 20°C and 6.0 kW (38 kW/cm2) at 300°C. The repeatable current test for 1 hour with triangular pulse, which corresponds to the surge current under the inverter operation, has been achieved without device failure.
