電気学会論文誌C(電子・情報・システム部門誌)
Online ISSN : 1348-8155
Print ISSN : 0385-4221
<電子物性・デバイス>
超音速N2分子線により誘起されるAlN薄膜形成過程の表面温度依存性
寺岡 有殿神農 宗徹高岡 毅James Robert Harries岡田 隆太岩井 優太郎吉越 章隆米田 忠弘
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2014 年 134 巻 4 号 p. 524-525

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Surface temperature dependence on the translational energy induced nitridation of Al(111) has been investigated by using synchrotron radiation photoemission spectroscopy. Incubation time for N1s photoemission onset was found to be longer at lower temperatures than 473 K, indicating precursor formation followed by proper nitridation. The major product is the three-fold N atom. The minor four-fold one decreased at higher temperatures. Three step reaction mechanisms, that is, translational energy induced nitridation, precursor formation, and proper nitridation of the precursor states, were presented.

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