電気学会論文誌C(電子・情報・システム部門誌)
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
<電子物性・デバイス>
Unclamped Inductive Switching試験による4H-SiC MOSFETの最大接合温度の評価
安 俊傑生井 正輝岡本 大矢野 裕司只野 博岩室 憲幸
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2017 年 137 巻 2 号 p. 216-221

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Normally, thermal breakdown is one of the serious failure phenomena in the power device application, which drives the researchers to focus on exploration of the failure mechanism and the new evaluation method for power device. In this paper, unclamped inductive switching (UIS) test is presented to evaluate energy handing ability and maximum junction temperature of 1200V/19A SiC MOSFET during avalanche mode. It is verified that commercial 1200V/19A SiC MOSFET can easily withstand almost ten microseconds avalanche time and around 924 K maximum junction temperature with 1 mH inductance and 400 V DC bus at the case temperature of 300 K in avalanche mode. In addition, three reasonable evaluation methods of the maximum junction temperature for SiC MOSFET are summarized at different case temperatures.

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