電気学会論文誌C(電子・情報・システム部門誌)
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
<電子物性・デバイス>
量子ドリフト拡散モデルにおける量子ポテンシャル係数の検討
伊藤 大貴廣木 彰
著者情報
ジャーナル 認証あり

2020 年 140 巻 11 号 p. 1176-1181

詳細
抄録

In this paper, we have investigated a quantum potential model in the quantum drift diffusion (QDD) model which allows to simulate quantum confinement effects in the inversion layer for advanced MOSFETs. The accuracy of the quantum potential model has been examined by comparing with the Schrodinger Poisson (SP) model which is able to simulate the quantum confinement effects with high accuracy. As a result, the quantum potential model shows quantum confinement effects of electron distributions in the inversion layer for an advanced MOSFET with a 1.5 nm gate oxide thickness. In addition, we have focused on the gate voltage dependence of the quantum potential coefficient in the quantum potential model. Electron densities calculated using the QDD model provide good accuracy in high gate voltage region. On the other hand, there is a discrepancy of electron densities using the QDD model comparing the SP model in subthreshold voltage region. It is found that the discrepancy comes from an assumption of constant model coefficient.

著者関連情報
© 2020 電気学会
前の記事 次の記事
feedback
Top