Efforts to achieve carbon neutrality are accelerating in order to solve global warming, a worldwide environmental problem. Efficient use of electric energy requires improved performance, higher functionality, and higher quality of power semiconductor devices, which are key components. In recent years, as the performance of silicon (Si)-based power devices is approaching the theoretical limit, there is a strong need to not only improve performance by optimizing the structure, but also to fully exploit the performance of the devices through device-usage techniques. Silicon carbide (SiC) and gallium nitride (GaN) devices, which are wide bandgap semiconductors, are already in the market, but in addition to further improvement of their characteristics, improvement of their reliability and durability is also required. In this review, we will introduce the technical trends of power semiconductor devices, focusing on the latest papers.
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