A concept on High-conductivity IGBT with Time And Space Control of stored carrier (TASC HiGT) for pursuit of low-loss is proposed. The function is divided into high-conductivity chip (Hc) and high-speed chip (Hs) controlled by Dual-gate so as to exhibit the optimum stored carrier density for conduction and switching operation. By obtaining controllability of the stored carrier density over the drift, a ‒47% trade-off improvement on 6.5 kV rated was demonstrated. The proposed concept can generate further ‒34% inverter loss effect keeping low-cost Si material merit.
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