脱炭素社会に貢献する第3世代RC-IGBT技術

抄録

In this paper, a newly developed 3^rd Gen. RC-IGBT is presented. To reduce the power loss and improve the heat dissipation of RC-IGBTs, we introduced four approaches, controlling Gate-capacitances, thin wafer technique, high-density diode arrangement, and low carrier injection anode and cathode. The superior performance of the 3^rd Gen. RC-IGBT is very promising for the carbon neutral.