大規模集積シリコン熱電デバイス

抄録

This article reviews the development of Si-based thermoelectric device conducted by the author’s group. A series of integrated thermoelectric devices of silicon-nanowire thermoelements were fabricated with a matured and standard Si-CMOS process, demonstrating scaling rules for miniaturization and large-scale integration on thermoelectric performance. The thermoelectric device exhibited a high specific power generation capacity of 0.9 µW/cm²K². The optimum device layout to maximize the power generation capacity will be discussed in detail.