宇宙空間におけるシリコン結晶成長の計算機シミュレーション

抄録

We are planning to grow spherical Si single crystal in space by using space shuttle (SL-J) in 1991. The crystal growth will be done in a cylindrical electrical furnace in such a manner that the spherical Si melt with Si single crystal rod is solidified. The furnace temperature should be controlled so as to grow Si single crystal with proper solid-liquid interface.
The present study deals with the precision computer simulation of Si crystal growth in space. The crystal growth is influenced by various physical phenomena such as temperature conduction, natural and Marangoni convections, phase change and radiation from furnace. In the present treatment, a 2D-simulation with axial symmetry is carried out, taking into account of the 3D radiation field with a specific temperature distribution of the furnace wall.
The simulation program consists of four modules. The first module is used for the calculation of the parabolic partial differential equation by using the control volume method. The second one evaluates implicitly the phase change by the entalpy method. The third one is for computing the heat flux from surface by radiation. The last one is for calculating the view factors with Monte Carlo method, which are necessary to get the heat flux