抄録
Organic static induction transistors(SIT) are fabricated using copper-phthalocyanine (CuPc) evaporated films. The slit type Al gate electrode of the device is sandwiched by the CuPc films. Schottky junction is formed at the interface between Al gate electrode and CuPc films. From the experimental results, it is found that source-drain current can be controlled by the bias voltage applied to Al gate electrode. The device characteristics depend on the gate bias voltage and structure of Al electrode. Good static and dynamic characteristics of the transistors are obtained by choosing a proper slit structure of Al electrode.
