抄録
This paper describes how mechanical stress affects the electrical characteristics of power devices, depending on the surface structure of the device and stress direction. We applied ideal external uni-axial stress to the various power devices, and studied the mechanism by comparing results from experiments and simulations. We found that the stress dependence of the on-state voltage mainly arose from the MOSFET portion of the IGBT. This consideration gives us the important information for designing a power module with higher output density.
