Double Injection Type Magnetodiode Formed on a SOI Substrate

Abstract

Semiconductor magnetodiode with very small size, which has similar operation-principle to the SMD (Sony magnetodiode), has been fabricated on a thin Si film of SOI substrate and its fundamental characteristics are evaluated. This magnetodiode is able to fabricate together with ICs such as amplifier, driving circuits, compensation circuits, etc. using the update semiconductor IC technologies on a Si chip. Double injection in this magnetodiode is confirmed, and the magnetic sensitivity of ΔI/I₀∼=10% at H=1kOe is obtained in this double injection regime even under non-optimized conditions.