Ultra-Fine Pitch Electrical feed through using Si deep etching and bonding wafer

Abstract

Si based multi-layered print circuit board is developed. The Si wafer, which has the same thermal coefficient as mounted chips, of 4 inch size was used and we have fabricated the electrical feed through by filling the metal into the small holes prepared by ICP etching. Moreover the wafers with through holes and trenches were aligned and bonded to make the stacked layer structure and we had tried the metal filling into the holes and trenches. The fabricated device was tested by insulation measurement. As a result, insulating layer of more than 1GΩ was obtained.