Electric Properties of the ITO-ZnSe-CdTe-ZnTe Photo Sensor Cell

Abstract

In this report, the ITO-ZnSe-CdTe-ZnTe cell was used for a photo sensor. ITO(Indium Tin Oxide) was used on the glass substrates as the transparent electrode, and ZnSe and CdTe layer were prepared by the vacuum deposition on this ITO, and were treated with heat at 560°C. The ZnSe-CdTe sample that CdTe layer was prepared on ITO-ZnSe(0.1μm) substrate has not high-density level at the junction surface, and the CdTe layer with little lattice imperfection can be prepared. In spite of improvement in the crystalline form, this ZnSe-CdTe sample cell has not sufficient electric current response for the light absorption of CdTe layer. In order to increase the electric current response for the light, ZnTe layer was prepared by the vacuum deposition on the ZnSe-CdTe layer, and were treated with heat at 560°C. This ITO-ZnSe-CdTe-ZnTe photo sensor cell has sufficient electric current response for the visible light and near infrared light. It is presumed that the electric filed in the CdTe layer is enough to drive the cell.