抄録
The remarkable negative photo-induced current and negative differential characteristics according to the forward bias voltage have been observed successfully for GaAs/GaAlAs multi-quantum well structures with a storage layer of InAs/GaAs short period superlattice. The characteristics are dependent on the crystal quality of the storage layer and extremely enhanced by using the InAs/GaAs short period superlattice compared with InxGa1-xAs alloys.
