Structural properties of Si films deposited at 300°C, using plasma enhanced chemical transport method, were investigated. Obtained deposition rate was 6.5nm/min and calculated residual stress was about 300Mpa (compressive). X-ray diffraction (XRD) pattern and Raman spectra indicate that the films on both on Si and glass substrates are composed mostly of poly-Si. And the crystallite size on glass is smaller than that of the Si substrate.
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