抄録
This paper reports the development of a new double-side plasma-enhanced plasma chemical vapor deposition (PECVD) system for amorphous SiC. The PECVD system has cathode-coupling and hot wall type configuration. A wafer, which works as a cathode, is supported at the center of a quartz tube, and carbon anodes are placed at both sides of the wafer. Using tetramethylsilane (Si(CH3)4) mixed with H2 and Ar, amorphous SiC was deposited on both sides of the wafer simultaneously, and little wafer bending was observed even if the film has a compressive stress of several hundred MPa. Thus, the developed double-side PECVD system is useful to minimize wafer bending, which is often a problem for devices and fabrication processes. The fundamental properties (e.g. stress and Si/C ratio) of deposited films were investigated under different deposition conditions (e.g. gas flow rates and self-bias voltage).
