This paper reports a patterning process for photodiodes using crystalized selenium thin films which exhibit very high optical absorption coefficient with suitable spectral response at visible wavelengths. Selenium (Se) / titanium dioxide (TiO2) heterojunction photodiode can be fabricated by sequentially thin film deposition processes at relative low process temperatures (< 350℃) and can be patterned by combination of lithography and etching processes. In this study, the impacts of tellurium inserted layer between Se and TiO2 layers on their adhesion are experimentally investigated. Process damages on the patterned photodiodes are also characterized through current-voltage measurement.
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