非晶質インジウム-ガリウム-亜鉛酸化物半導体薄膜トランジスタを用いた静電気センサの開発

抄録

We have been working on new applications of amorphous indium-gallium-zinc oxide thin-film transistors (a-InGaZnO TFTs). In this paper, we demonstrated sensing of electrostatic potential by an a-InGaZnO TFT with and without a top-gate electrode, whose sensitivity to the electrostatic potential were 4 and 50 nA/kV, respectively. We found that an extended-gate type sensor, which has an extended-gate electrode connected to a top-gate electrode, indicates response to the electrostatic potential, depending on the size of the electrode and the distance between the electrode and probe.