静的純ねじり試験によるシリコントーションバーの破壊強度向上法の探索

抄録

Static pure torsion fracture tester for silicon torsional bar was developed. Screening of process factor for silicon torsional bar by static pure torsion destructive test was demonstrated. Planarization of Deep RIE process surface by chemical dry etch (CDE) shows improvement for torsion fracture angle. Reducing surface crystal defect in Deep RIE process surface by hydrogen anneal shows significant improvement in torsion fracture angle.