走査型プローブ顕微鏡を用いた電圧印加中のSiCプレーナ型パワーMOSFETの観測

抄録

We have developed a scanning probe microscope to evaluate the device with high spatial resolution in a power semiconductor device with a voltage applied. Specifically, we observed the cross-sectional structure of exposed SiC planar MOSFET using a multifunctional probe microscope, which combines atomic force microscopy, Kelvin probe force microscopy, and scanning capacitance force microscopy. By observing the channel formation and carrier concentration change in response to the application of voltage, we were able to visualize the internal phenomenon due to the channel formation.