集積回路内に搭載可能な磁界検出動作0.18µm 8角形多端子MOSFETの研究

抄録

In this paper, we design and evaluate an Octagonal-MOSFET, whose channel length is 2.42 µm, for parallel sensing and MOSFET operation using a 0.18 µm CMOS process. As the experimental results, the proposed device, whose size is much smaller than previous research using a 2.0 µm CMOS process, can perform as a circuit and magnetic field detection sensor. Thus, the proposed Octagonal-MOSFET can realize both circuit and sensor operations.