TiO₂/Se光電池の高効率化のためのヘテロ接合特性制御

抄録

This paper reports a comparative study of anatase- and rutile-TiO₂ thin films on TiO₂/Se hetero junction photovoltaic cells. Anatase- and rutile-TiO₂ thin films were deposited by intentional control of sputtering pressure and substrate temperature in reactive sputtering process. Se photovoltaic devices with rutile-TiO₂ thin films exhibited higher short circuit current densities and photovoltaic conversion efficiencies than those of devices with anatase TiO₂ layers. This result would attribute to suitable band alignment between rutile-TiO₂ and Se layers. Conduction band alignment between Se and TiO₂ layers is also discussed in connection with the measured optical bandgap energies and ionization energies.