単層フォトレジストによる1 µm線幅リフトオフプロセスの評価

抄録

This paper describes lift-off process for 1 µm fine pattern using single layer lift-off photoresist. For the lift-off process, tapered structure or undercut structure of single layer photoresist was achieved by selecting appropriate photoresist and adjusting exposure dose and development time of photolithography. Then we deposited 0.3 µm-thick aluminum by electron beam evaporator. In order to make aluminum particles reach the patterned substrate perpendicularly, we used the fixed stage instead of the planetary rotating stage. As the result, we successfully fabricated 1 µm 1:1 line and space, 0.3 µm-thick Al pattern using single layer photoresist.