電気学会論文誌E(センサ・マイクロマシン部門誌)
Online ISSN : 1347-5525
Print ISSN : 1341-8939
ISSN-L : 1341-8939
The Microassembly Technique for a 3D Single Crystalline Silicon Structure Using a Polyimide/Chromium Cantilever
Yoshiyuki WATANABETakashi MINETASeiya KOBAYASHIKenya SHIBATA
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1999 年 119 巻 4 号 p. 236-241

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The microassembly technique on the wafer is key technology to realize multi-axis sensors (e. g. magnetometer) or three-dimensional micro systems (e. g. an optical system). We have investigated the bending of a polyimide/chromium cantilever to lift a silicon island (400×300×10μm3 and 1000×1000×240μm3) on the wafer at an angle of 90°, the planarization of a diced silicon sidewall and the bonding of a silicon island to the planarized silicon sidewall with polyimide interlayer. With this microassembly technique, the three-dimensional single crystalline silicon structures have been fabricated.

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© The Institute of Electrical Engineers of Japan
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