抄録
Barium Strontium Titanate (Ba1-xSrxTiO3) ferroelectric thin films have been prepared by Metal Organic Decomposition (MOD) on Pt/Ti/SiO2/Si and on micromachined Pt/Ti/NSG/Si3N4/SiO2/Si wafer with an aim to fabricate dielectric bolometer type infrared sensor. The XRD pattern and D-V hysteresis curve of the film have been measured in order to investigate the effects of the final annealing temperature and annealing time on the property of the film. The results show that the films annealed at 700 or 800°C all have good perovskite structure, while the film annealed at 800°C has better ferroelectric loops. Films annealed at 800°C with different annealing time from 5 to 60 minutes show a similar perovskite structure, among which films annealed at 30 and 60 minutes condition have the better ferroelectric loops. Temperature Coefficient of Dielectric constant (TCD) of the MOD made BST thin film on micromachined substrate is about 1%/K. The uniformity of the BST film on micromachined Si wafer also has been confirmed to be well enough for operation of sensor array.
